Abstract:
In this work, InAlGaN/GaN high electron mobility transistors (GaN HEMTs) device with cap layer had been designed and optimized using Silvaco Atlas simulator with the size of (0.5 ×1) µm. A small signal equivalent circuit of GaN high electron mobility transistor is built. Different techniques are used to extract the extrinsic and intrinsic parameters of the simulated device. The elements of the produced equivalent circuit are directly computed at different bias conditions and frequencies with different frequency ranges low medium and high frequencies (0.1GHz, 20GHz, and 45GHz) respectively. In this work, small signal S-parameters are used to extract the device parameters by using different techniques. These parameters are inserted into the Advance Design System (ADS) to build the GaN HEMT model. Then, small signal S-parameters of the simulated device validated with the S-parameters results from the modeled device in ADS. Good results have been obtained from the DC and RF characteristics comparison at a wide range of frequencies which make the designed model a good choice for microwave applications.
Keywords: Advance design system, GaN HEMT, Intrinsic, Extrinsic, cold, and Hot-FET.
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